• Part: MTB095N10KRN3
  • Description: 100V N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech Electronics
  • Size: 436.14 KB
Download MTB095N10KRN3 Datasheet PDF
CYStech Electronics
MTB095N10KRN3
MTB095N10KRN3 is 100V N-Channel Enhancement Mode MOSFET manufactured by CYStech Electronics.
Features - Simple drive requirement - Small package outline - ESD protected gate - Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.5A RDSON@VGS=4.5V, ID=1A 100V 2.3A 100mΩ(typ) 140mΩ(typ) Symbol Outline SOT-23 D G:Gate S:Source D:Drain Ordering Information Device Package Shipping MTB095N10KRN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C714N3 Issued Date : 2017.01.13 Revised Date : 2017.10.26 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Notes 1,...