MTB095N10KRN3
MTB095N10KRN3 is 100V N-Channel Enhancement Mode MOSFET manufactured by CYStech Electronics.
Features
- Simple drive requirement
- Small package outline
- ESD protected gate
- Pb-free lead plating and halogen-free package
BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.5A
RDSON@VGS=4.5V, ID=1A
100V 2.3A 100mΩ(typ) 140mΩ(typ)
Symbol
Outline
SOT-23 D
G:Gate S:Source D:Drain
Ordering Information
Device
Package
Shipping
MTB095N10KRN3-0-T1-G
SOT-23 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C714N3 Issued Date : 2017.01.13 Revised Date : 2017.10.26 Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage Gate-Source Voltage
±20
Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3)
Pulsed Drain Current (Notes 1,...