MTB095N10KRN3 - 100V N-Channel Enhancement Mode MOSFET

CYStech Electronics

Key Features

Simple drive requirement.
Small package outline.
ESD protected gate.
Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.5A RDSON@VGS=4.5V, ID=1A 100V 2.3A 100mΩ(typ) 140mΩ(typ) Symbol MTB095N10KRN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device Package Shipping MTB095N10KRN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendl.

MTB095N10KRN3 100v n-channel enhancement mode mosfet by CYStech Electronics - Datasheet Preview

Datasheet Details

Part number	MTB095N10KRN3
Manufacturer	CYStech Electronics
File Size	436.14 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	MTB095N10KRN3 Datasheet

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CYStech Electronics Corp. 100V N-Channel Enhancement Mode MOSFET MTB095N10KRN3 Spec. No. : C714N3 Issued Date : 2017.01.13 Revised Date : 2017.10.26 Page No. : 1/9 Features • Simple drive requirement • Small package outline • ESD protected gate • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.5A RDSON@VGS=4.5V, ID=1A 100V 2.