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MTB090N06J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTB090N06J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB090N06J3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500.

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Datasheet Details

Part number MTB090N06J3
Manufacturer CYStech Electronics
File Size 345.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB090N06J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C420J3 Issued Date : 2016.09.07 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTB090N06J3 BVDSS ID@ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=3A RDS(ON)@VGS=4V, ID=2.