MTB100A10KRQ8 - Dual N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

Simple drive requirement.
Low on-resistance.
Fast switching speed.
Dual N-ch MOSFET package.
ESD protected gate.
Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=2A 100V 2.5A 2.0A 100mΩ(typ) 119mΩ(typ) Equivalent Circuit MTB100A10KRQ8 Outline SOP-8 D2 D2 D1 D1 G：Gate D：Drain S：Source Pin 1 G2 S2 G1 S1 Ordering Information Device MTB100A10KRQ8-0-T3-G P.

MTB100A10KRQ8 dual n-channel enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTB100A10KRQ8
Manufacturer	Cystech Electonics
File Size	402.82 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB100A10KRQ8 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB100A10KRQ8 Spec. No. : C059Q8 Issued Date : 2016.09.22 Revised Date : Page No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • ESD protected gate • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=2A 100V 2.5A 2.