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Cystech Electonics

MTB100A10KRQ8 Datasheet Preview

MTB100A10KRQ8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
MTB100A10KRQ8
Spec. No. : C059Q8
Issued Date : 2016.09.22
Revised Date :
Page No. : 1/9
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Dual N-ch MOSFET package
ESD protected gate
Pb-free lead plating & Halogen-free package
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=2A
RDSON@VGS=4.5V, ID=2A
100V
2.5A
2.0A
100mΩ(typ)
119mΩ(typ)
Equivalent Circuit
MTB100A10KRQ8
Outline
SOP-8
D2
D2
D1
D1
GGate DDrain SSource
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB100A10KRQ8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating and halogen-free package)
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB100A10KRQ8
Preliminary
CYStek Product Specification




Cystech Electonics

MTB100A10KRQ8 Datasheet Preview

MTB100A10KRQ8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=8A, VDD=25V
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Spec. No. : C059Q8
Issued Date : 2016.09.22
Revised Date :
Page No. : 2/9
Limits
100
±20
4.4
2.8
2.5 (Note 2)
2.0 (Note 2)
16 (Note 1)
16
32 (Note 4)
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single operation
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s.
3. Surface mounted on minimum copper pad, pulse width10s.
4. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=8A, VDD=25V.
Symbol
RθJC
RθJA
Value
25
62.5
78 (Note 2)
135 (Note 3)
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
100
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
- 5 - S VDS =10V, ID=3A
- - ±10
VGS=±16V, VDS=0V
- - 1 μA VDS =80V, VGS =0V
- - 25
VDS =80V, VGS =0V, Tj=70°C
-
-
100
119
130
167
mΩ
VGS =10V, ID=2A
VGS =4.5V, ID=2A
- 7.7 11.6
- 1.5 - nC VDS=50V, ID=2.5A, VGS=10V
- 1.3 -
MTB100A10KRQ8
Preliminary
CYStek Product Specification


Part Number MTB100A10KRQ8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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