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MTB100A10KRH8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=4.5V, ID=2A.
  • Fast Switching Characteristic.
  • ESD protected gate.
  • Pb-free lead plating and Halogen-free package 100V 8A 5.1A 2.7A 2.2A 100mΩ(typ) 120mΩ(typ) Equivalent Circuit MTB100A10KRH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB100A10KRH8-0-T6-G MTB100A10KR.

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Datasheet Details

Part number MTB100A10KRH8
Manufacturer Cystech Electonics
File Size 831.41 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB100A10KRH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C059H8 Issued Date : 2016.11.01 Revised Date : 2018.04.16 Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB100A10KRH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=4.5V, ID=2A • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating and Halogen-free package 100V 8A 5.1A 2.7A 2.