Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C059H8 Issued Date : 2016.11.01 Revised Date : 2018.04.16 Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB100A10KRH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=4.5V, ID=2A
- Fast Switching Characteristic
- ESD protected gate
- Pb-free lead plating and Halogen-free package
100V 8A 5.1A 2.7A 2.2A 100mΩ(typ) 120mΩ(typ)
Equivalent Circuit
Outline
Pin 1
DFN5×6 Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device MTB100A10KRH8-0-T6-G
Package...