Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C123J3 Issued Date : 2016.07.20 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P08KJ3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-5A
RDS(ON)@VGS=-4.5V, ID=-3A
Features
- Low Gate Charge
- Simple Drive Requirement
- ESD Protected Gate
- Pb-free Lead Plating & Halogen-free Package
-80V -11.3A
-3.2A 103mΩ(typ) 141mΩ(typ)
Equivalent Circuit
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB110P08KJ3-0-T3-G
Package
TO-252 (Pb-free lead plating & halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS pliant...