MTB110P08KJ3 Description
CYStech Electronics Corp. 2016.07.20 Revised Date.
MTB110P08KJ3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- ESD Protected Gate
- Pb-free Lead Plating & Halogen-free Package
- 80V -11.3A
- 3.2A 103mΩ(typ) 141mΩ(typ)
| Part number | MTB110P08KJ3 |
|---|---|
| Download | MTB110P08KJ3 Datasheet (PDF) |
| File Size | 409.57 KB |
| Manufacturer | Cystech Electonics |
| Description | P-Channel Enhancement Mode Power MOSFET |
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| Part Number | Description |
|---|---|
| MTB110P08KN3 | P-Channel Enhancement Mode MOSFET |
| MTB110P08KN6 | P-Channel Enhancement Mode Power MOSFET |
| MTB115P10KJ3 | P-Channel Enhancement Mode Power MOSFET |
| MTB11N03Q8 | N-Channel Enhancement Mode Power MOSFET |
| MTB100A10KRH8 | Dual N-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2016.07.20 Revised Date.