MTB110P08KJ3 Overview
Key Features
- Low Gate Charge
- Simple Drive Requirement
- ESD Protected Gate
- Pb-free Lead Plating & Halogen-free Package
- 3.2A 103mΩ(typ) 141mΩ(typ) Equivalent Circuit MTB110P08KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS
| Part | MTB110P08KJ3 |
|---|---|
| Description | P-Channel Enhancement Mode Power MOSFET |
| Category | MOSFET |
| Manufacturer | Cystech Electonics |
| Size | 409.57 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |