MTB110P08KN6 Overview
CYStech Electronics Corp. 2015.11.24 Revised Date.
MTB110P08KN6 Key Features
- Simple drive requirement
- Low on-resistance
- Small package outline
- Pb-free lead plating and halogen-free package
- ESD protected gate
| Part number | MTB110P08KN6 |
|---|---|
| Datasheet | MTB110P08KN6-CystechElectonics.pdf |
| File Size | 461.80 KB |
| Manufacturer | Cystech Electonics |
| Description | P-Channel Enhancement Mode Power MOSFET |
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CYStech Electronics Corp. 2015.11.24 Revised Date.
See all Cystech Electonics datasheets
| Part Number | Description |
|---|---|
| MTB110P08KN3 | P-Channel Enhancement Mode MOSFET |
| MTB110P08KJ3 | P-Channel Enhancement Mode Power MOSFET |
| MTB115P10KJ3 | P-Channel Enhancement Mode Power MOSFET |
| MTB11N03Q8 | N-Channel Enhancement Mode Power MOSFET |
| MTB100A10KRH8 | Dual N-Channel Enhancement Mode Power MOSFET |
| MTB100A10KRQ8 | Dual N-Channel Enhancement Mode Power MOSFET |
| MTB100N10RKJ3 | N-Channel Enhancement Mode Power MOSFET |
| MTB100N15KRL3 | N-Channel Enhancement Mode Power MOSFET |
| MTB12N03Q8 | N-Channel Logic Level Enhancement Mode Power MOSFET |
| MTB12N03Q8 | N-Channel Logic Level Enhancement Mode Power MOSFET |