Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8
-80V P-Channel Enhancement Mode Power MOSFET
MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A VGS=-4.5V, ID=-1A
-80V -3.7A -2.9A 104mΩ 141mΩ
Features
- Simple drive requirement
- Low on-resistance
- Small package outline
- Pb-free lead plating and halogen-free package
- ESD protected gate
Equivalent Circuit
G：Gate S：Source...