MTB110P08KN6 Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8 -80V P-Channel Enhancement Mode Power MOSFET MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1A -80V -3.7A -2.

Datasheet Details

Part number	MTB110P08KN6
Manufacturer	Cystech Electonics
File Size	461.80 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB110P08KN6-CystechElectonics.pdf

Key Features

Simple drive requirement.
Low on-resistance.
Small package outline.
Pb-free lead plating and halogen-free package.
ESD protected gate Equivalent Circuit MTB110P08KN6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total.

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