MTB110P08KN6 Description
CYStech Electronics Corp. 2015.11.24 Revised Date.
MTB110P08KN6 Key Features
- Simple drive requirement
- Low on-resistance
- Small package outline
- Pb-free lead plating and halogen-free package
- ESD protected gate
| Part number | MTB110P08KN6 |
|---|---|
| Download | MTB110P08KN6 Datasheet (PDF) |
| File Size | 461.80 KB |
| Manufacturer | Cystech Electonics |
| Description | P-Channel Enhancement Mode Power MOSFET |
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| Part Number | Description |
|---|---|
| MTB110P08KN3 | P-Channel Enhancement Mode MOSFET |
| MTB110P08KJ3 | P-Channel Enhancement Mode Power MOSFET |
| MTB115P10KJ3 | P-Channel Enhancement Mode Power MOSFET |
| MTB11N03Q8 | N-Channel Enhancement Mode Power MOSFET |
| MTB100A10KRH8 | Dual N-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2015.11.24 Revised Date.