MTB110P08KN3 Key Features
- Low gate charge
- pact and low profile SOT-23 package
- Advanced trench process technology
- High density cell design for ultra low on resistance
- ESD protected gate
- Pb-free lead plating package
| Part Number | Description |
|---|---|
| MTB110P08KN6 | P-Channel Enhancement Mode Power MOSFET |
| MTB110P08KJ3 | P-Channel Enhancement Mode Power MOSFET |
| MTB115P10KJ3 | P-Channel Enhancement Mode Power MOSFET |
| MTB11N03Q8 | N-Channel Enhancement Mode Power MOSFET |
| MTB100A10KRH8 | Dual N-Channel Enhancement Mode Power MOSFET |