MTB12N04J3 Datasheet | Cystech Electonics

Features - Low Gate Charge - Simple Drive Requirement - Ro HS pliant & Halogen-free package BVDSS ID RDSON(MAX) 40V 30A 12mΩ Equivalent Circuit Outline TO-252 G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current - 1 Avalanche Current Avalanche Energy @ L=0.1m H, ID=20A, RG=25Ω Repetitive Avalanche Energy @ L=0.05m H - 2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : - 1. Pulse width limited by maximum junction temperature - 2. Duty cycle ≤ 1% VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 40 ±20 30 20 120 20 20 10 50 26 -55~+175 A m J W °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a .. Spec. No. : C707J3 Issued Date : 2009.04.23 Revised Date : Page No. : 2/7 Value 3 75 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON) - 1 - 1 Min. 40 1.5 30 - Typ. 1.8 25 10.8 15.5 22 3.6 7 3 11 16 6 1700 180 106 2 60 42 Max. 3.2 ±100 1 25 12 20 25 100 1.3 - Unit V V S n A μA μA A mΩ mΩ Test Conditions VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=20A VGS=±20, VDS=0 VDS =32V, VGS =0 VDS =30V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=20A VGS =7V, ID=15A - 1 Dynamic...