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Cystech Electonics

MTB20A03KQ8 Datasheet Preview

MTB20A03KQ8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2015.04.24
Revised Date :
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB20A03KQ8 BVDSS
30V
ID@VGS=10V, TA=25°C 7A
ID@VGS=10V, TA=70°C 5.6A
RDS(ON)@VGS=10V, ID=7A 14.7 mΩ(typ)
Features
Single Drive Requirement
RDS(ON)@VGS=4.5V, ID=7A 18.8 mΩ(typ)
RDS(ON)@VGS=4V, ID=7A 21 mΩ(typ)
Low On-resistance
Fast Switching Characteristic
ESD Protected
Pb-free & Halogen-free package
Symbol
MTB20A03KQ8
Outline
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTB20A03KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20A03KQ8
CYStek Product Specification




Cystech Electonics

MTB20A03KQ8 Datasheet Preview

MTB20A03KQ8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C737Q8
Issued Date : 2015.04.24
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TA=25°C, VGS=10V
(Note 2) TA=70°C, VGS=10V
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=1mH, ID=7A, RG=25Ω
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
PD
Operating Junction and Storage Temperature
Tj, Tstg
Limits
30
±20
7
5.6
40
7
24.5
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single Rth,j-a
operation
Note : 1.Pulse width limited by maximum junction temperature.
2. Surface mounted on 1 in2 pad of 2 oz copper, t10s.
3. Surface mounted on minimum copper pad, pulse width10s.
Value
40
62.5
78
135
(Note 2)
(Note 3)
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
30 -
1.0 -
-8
--
--
--
- 14.7
- 18.8
- 21
-
2.5
-
±10
1
5
20
26
30
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =5V, ID=6A
VGS=±20V
μA VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=55°C
VGS =10V, ID=7A
mΩ VGS =4.5V, ID=7A
VGS =4V, ID=7A
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
-
-
-
-
-
-
-
11.6
5.9
1.8
2.7
476
85
67
-
-
-
-
-
-
nC ID=8A, VDS=15V, VGS=10V
pF VGS=0V, VDS=15V, f=1MHz
MTB20A03KQ8
CYStek Product Specification


Part Number MTB20A03KQ8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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