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Cystech Electonics

MTB20A03Q8 Datasheet Preview

MTB20A03Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2012.07.03
Revised Date : 2013.03.01
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB20A03Q8 BVDSS
ID
30V
6.8A
RDS(ON)@VGS=10V, ID=6A 20 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=4A 29 mΩ(typ)
Description
The MTB20A03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free & Halogen-free package
Symbol
MTB20A03Q8
Outline
SOP-8
GGate DDrain SSource
MTB20A03Q8
CYStek Product Specification




Cystech Electonics

MTB20A03Q8 Datasheet Preview

MTB20A03Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2012.07.03
Revised Date : 2013.03.01
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TA=25°C, VGS=10V
(Note 2) TA=100°C, VGS=10V
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=6A, RG=25Ω
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
PD
Operating Junction and Storage Temperature
Tj, Tstg
Limits
30
±20
6.8
4.3
40
6
1.8
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
Rth,j-c
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2. Surface mounted on 1 in2 pad of 2 oz copper, t10s.
3. Surface mounted on minimum copper pad, pulse width10s.
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
Rg
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.7
8
-
-
-
20
29
11
6.4
1.7
3
715
76
66
2.2
-
3.0
-
±100
1
25
26
40
-
-
-
-
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=6A
nA VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
mΩ
VGS =10V, ID=6A
VGS =4.5V, ID=4A
nC ID=6.8A, VDS=15V, VGS=10V
pF VGS=0V, VDS=15V, f=1MHz
Ω VGS=15mV, VDS=0V, f=1MHz
MTB20A03Q8
CYStek Product Specification


Part Number MTB20A03Q8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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