MTB20A04DH8 Datasheet Dual N-Channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C978H8 Issued Date : 2017.01.19 Revised Date : 2017.02.10 Page No.

MTB20A04DH8 dual n-channel enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTB20A04DH8
Manufacturer	Cystech Electonics
File Size	646.60 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Download	MTB20A04DH8 Download (PDF)

Key Features

ID@VGS=10V, TA=70°C.
Low On Resistance RDS(ON)@VGS=10V, ID=8A.
Simple Drive Requirement.
Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18.5mΩ(typ) Equivalent Circuit MTB20A04DH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB20A04DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free.

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