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MTB20A04Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • Pb-free lead plating & halogen-free package RDSON@VGS=4.5V, ID=4A 40V 13.4A 8.4A 16mΩ(typ) 18mΩ(typ) Equivalent Circuit MTB20A04Q8 Outline SOP-8 D2 D2 D1 D1 G：Gate S：Source D：Drain Pin 1 G2 S2 G1 S1 Ordering Information Device MTB20A04Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment.

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Datasheet Details

Part number MTB20A04Q8
Manufacturer Cystech Electonics
File Size 369.32 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB20A04Q8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C978Q8 Issued Date : 2016.12.23 Revised Date : Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTB20A04Q8 BVDSS ID@ VGS=10V, TC=25°C ID@ VGS=10V, TA=25°C RDSON@VGS=10V, ID=8A Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & halogen-free package RDSON@VGS=4.5V, ID=4A 40V 13.4A 8.