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MTB20A04DH8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • ID@VGS=10V, TA=70°C.
  • Low On Resistance RDS(ON)@VGS=10V, ID=8A.
  • Simple Drive Requirement.
  • Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18.5mΩ(typ) Equivalent Circuit MTB20A04DH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB20A04DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free.

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Datasheet Details

Part number MTB20A04DH8
Manufacturer Cystech Electonics
File Size 646.60 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB20A04DH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C978H8 Issued Date : 2017.01.19 Revised Date : 2017.02.10 Page No. : 1/ 11 Dual N-Channel Enhancement Mode Power MOSFET MTB20A04DH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features ID@VGS=10V, TA=70°C • Low On Resistance RDS(ON)@VGS=10V, ID=8A • Simple Drive Requirement • Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18.