Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C978H8 Issued Date : 2017.01.19 Revised Date : 2017.02.10 Page No. : 1/ 11
Dual N-Channel Enhancement Mode Power MOSFET
MTB20A04DH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
ID@VGS=10V, TA=70°C
- Low On Resistance
RDS(ON)@VGS=10V, ID=8A
- Simple Drive Requirement
- Low Gate Charge
RDS(ON)@VGS=4.5V, ID=4A
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18.5mΩ(typ)
Equivalent Circuit
Outline
Pin 1
DFN5×6 Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device MTB20A04DH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating...