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MTB20A06KQ8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • ESD Protected.
  • Pb-free & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=6A RDS(ON)@VGS=4.5V, ID=6A 60V 6.3A 5.0A 17 mΩ(typ) 20 mΩ(typ) Symbol MTB20A06KQ8 Outline SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB20A06KQ8-0-T3-G Package SOP-8 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Ree.

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Datasheet Details

Part number MTB20A06KQ8
Manufacturer Cystech Electonics
File Size 396.13 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB20A06KQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB20A06KQ8 Spec. No. : C103Q8 Issued Date : 2016.05.19 Revised Date : 2016.05.20 Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • ESD Protected • Pb-free & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=6A RDS(ON)@VGS=4.5V, ID=6A 60V 6.3A 5.