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MTB20A06Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free & halogen-free package Symbol MTB20A06Q8 Outline SOP-8 G:Gate D:Drain S:Source Ordering Information Device MTB20A06Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & ree.

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Datasheet Details

Part number MTB20A06Q8
Manufacturer Cystech Electonics
File Size 360.53 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB20A06Q8 Datasheet

Full PDF Text Transcription for MTB20A06Q8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTB20A06Q8. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C925Q8 Issued Date : 2014.11.12 Revised Date : Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTB20A06Q8 BV...

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Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTB20A06Q8 BVDSS ID@VGS=10V, TA=25°C 60V 6A ID@VGS=10V, TC=25°C 8.5A RDS(ON)@VGS=10V, ID=6A 15.4 mΩ(typ) RDS(ON)@VGS=4.5V, ID=5A 16.