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MTB20A06Q8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free & halogen-free package Symbol MTB20A06Q8 Outline SOP-8 G:Gate D:Drain S:Source Ordering Information Device MTB20A06Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & ree.

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Datasheet Details

Part number MTB20A06Q8
Manufacturer Cystech Electonics
File Size 360.53 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB20A06Q8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C925Q8 Issued Date : 2014.11.12 Revised Date : Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTB20A06Q8 BVDSS ID@VGS=10V, TA=25°C 60V 6A ID@VGS=10V, TC=25°C 8.5A RDS(ON)@VGS=10V, ID=6A 15.4 mΩ(typ) RDS(ON)@VGS=4.5V, ID=5A 16.