900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cystech Electonics

MTB20A06Q8 Datasheet Preview

MTB20A06Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB20A06Q8
BVDSS
ID@VGS=10V, TA=25°C
60V
6A
ID@VGS=10V, TC=25°C 8.5A
RDS(ON)@VGS=10V, ID=6A 15.4 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=5A 16.3 mΩ(typ)
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free & halogen-free package
Symbol
MTB20A06Q8
Outline
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTB20A06Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20A06Q8
CYStek Product Specification




Cystech Electonics

MTB20A06Q8 Datasheet Preview

MTB20A06Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TA=25°C, VGS=10V
(Note 2) TA=70°C, VGS=10V
Continuous Drain Current
TC=25°C, VGS=10V
TC=100°C, VGS=10V
Pulsed Drain Current (Note 3)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=23A, RG=25Ω
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Symbol
VDS
VGS
IDSM
ID
IDM
IAS
EAS
PDSM
Power Dissipation
TC=25°C
TC=100°C
Operating Junction and Storage Temperature
PD
Tj, Tstg
Limits
60
±20
6.0
4.8
8.5
6.0
50
23
26.5
2 (Note 2)
1.6 (Note 2)
0.9 (Note 2)
3.75
1.88
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
40
Thermal Resistance, Junction-to-ambient, max, dual operation
Thermal Resistance, Junction-to-ambient, max , single operation
Rth,j-a
62.5
78 (Note 2)
135 (Note 3)
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C, t10s. 135°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation PDSM is based on
RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial TJ=25°
C.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
60 -
1.0 -
- 16
--
--
--
-
2.5
-
±100
1
25
V VGS=0V, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=6A
nA VGS=±20V
μA
VDS =48V, VGS =0V
VDS =48V, VGS =0V, Tj=55°C
MTB20A06Q8
CYStek Product Specification


Part Number MTB20A06Q8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
PDF Download

MTB20A06Q8 Datasheet PDF






Similar Datasheet

1 MTB20A06Q8 Dual N-Channel Enhancement Mode Power MOSFET
Cystech Electonics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy