• Part: MTB25N03KN3
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 411.88 KB
Download MTB25N03KN3 Datasheet PDF
Cystech Electonics
MTB25N03KN3
Features - Lower gate charge - ESD protected gate - Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TA=25°C RDSON(TYP)@VGS=10V, ID=4.2A RDSON(TYP)@VGS=4.5V, ID=3.5A RDSON(TYP)@VGS=3V, ID=2.5A 30V 6.5A 17.9mΩ 24.4mΩ 49.7mΩ Equivalent Circuit Outline SOT-23 D G:Gate S:Source D:Drain Ordering Information Device MTB25N03KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C122N3 Issued Date : 2015.09.08 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C, VGS=10V TA=70°C,...