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Cystech Electonics

MTB25N03KN3 Datasheet Preview

MTB25N03KN3 Datasheet

N-Channel Enhancement Mode MOSFET

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CYStech Electronics Corp.
Spec. No. : C122N3
Issued Date : 2015.09.08
Revised Date :
Page No. : 1/9
30V N-Channel Enhancement Mode MOSFET
MTB25N03KN3
Features
Lower gate charge
ESD protected gate
Pb-free lead plating and Halogen-free package
BVDSS
ID @VGS=10V, TA=25°C
RDSON(TYP)@VGS=10V, ID=4.2A
RDSON(TYP)@VGS=4.5V, ID=3.5A
RDSON(TYP)@VGS=3V, ID=2.5A
30V
6.5A
17.9mΩ
24.4mΩ
49.7mΩ
Equivalent Circuit
MTB25N03KN3
Outline
SOT-23
D
GGate
SSource
DDrain
S
G
Ordering Information
Device
MTB25N03KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB25N03KN3
CYStek Product Specification




Cystech Electonics

MTB25N03KN3 Datasheet Preview

MTB25N03KN3 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C122N3
Issued Date : 2015.09.08
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C, VGS=10V
TA=70°C, VGS=10V
Pulsed Drain Current
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
30
±16
6.5
5.2
50 (Note 1 & 2)
1.38 (Note 3)
0.88 (Note 3)
-55 ~ +150
Unit
V
A
W
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient , max
Thermal Resistance, Junction to Case, max
Symbol
RθJA
RθJC
Value
90 *2
20
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle 1%.
3. Surface mounted on 1 in² copper pad of FR4 board, t10s; 270°C/W when mounted on min. copper pad.
Electrical Characteristics (TA=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON) 1
*GFS 1
Dynamic
Ciss
Coss
Crss
*td(ON) 1 2
*tr 1 2
*td(OFF) 1 2
*tf 1 2
30
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
- - ±20
VGS=±16V, VDS=0V
- - 1 μA VDS=24V, VGS=0V
- - 10
VDS=24V, VGS=0V, Tj=55°C
- 17.9 23.5
VGS=10V, ID=4.2A
-
24.4 32.0
mΩ VGS=4.5V, ID=2A
- 49.7 66.5
VGS=3V, ID=2.5A
- 3.7 -
S VDS=10V, ID=1A
- 300 -
- 95 -
- 50 -
- 4.8 -
- 18 -
- 17.6 -
- 6.4 -
pF VDS=15V, VGS=0V, f=1MHz
ns VDS=15V, ID=1A,VGS=10V, RG=6Ω
MTB25N03KN3
CYStek Product Specification


Part Number MTB25N03KN3
Description N-Channel Enhancement Mode MOSFET
Maker Cystech Electonics
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