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MTB25N03KN3 - N-Channel Enhancement Mode MOSFET

Key Features

  • Lower gate charge.
  • ESD protected gate.
  • Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TA=25°C RDSON(TYP)@VGS=10V, ID=4.2A RDSON(TYP)@VGS=4.5V, ID=3.5A RDSON(TYP)@VGS=3V, ID=2.5A 30V 6.5A 17.9mΩ 24.4mΩ 49.7mΩ Equivalent Circuit MTB25N03KN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTB25N03KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment frie.

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Datasheet Details

Part number MTB25N03KN3
Manufacturer Cystech Electonics
File Size 411.88 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB25N03KN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C122N3 Issued Date : 2015.09.08 Revised Date : Page No. : 1/9 30V N-Channel Enhancement Mode MOSFET MTB25N03KN3 Features • Lower gate charge • ESD protected gate • Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TA=25°C RDSON(TYP)@VGS=10V, ID=4.2A RDSON(TYP)@VGS=4.5V, ID=3.5A RDSON(TYP)@VGS=3V, ID=2.5A 30V 6.5A 17.9mΩ 24.4mΩ 49.