MTB2D0N04H8 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB2D0N04H8
Manufacturer	Cystech Electonics
File Size	414.29 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB2D0N04H8-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 152A(silicon limit) 84A(package limit) 23A 1.64mΩ(typ) 1.89mΩ(typ) Symbol MTB2D0N04H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB2D0N04H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3.

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Published: Jun 24, 2016 |