Datasheet Summary
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C072F3 Issued Date : 2016.01.18 Revised Date : 2016.03.04 Page No. : 1/ 9
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
40V 84A
17.3A 2.2 mΩ(typ) 2.5 mΩ(typ)
Symbol
Outline
TO-263
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB2D0N04F3-0-T7-X
TO-263 (Pb-free lead plating and RoHS pliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS...