Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C072H8 Issued Date : 2015.12.28 Revised Date : 2016.03.04 Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB2D0N04H8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A
40V 152A(silicon limit) 84A(package limit)
23A 1.64mΩ(typ) 1.89mΩ(typ)
Symbol
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device MTB2D0N04H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free...