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Cystech Electonics

MTB35N04J3 Datasheet Preview

MTB35N04J3 Datasheet

N -Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e5e3Jt43U.com
Issued Date : 2009.03.11
Revised Date :
Page No. : 1/7
N -Channel Enhancement Mode Power MOSFET
MTB35N04J3
BVDSS
40V
ID 12A
Features
Low Gate Charge
Simple Drive Requirement
RoHS compliant & Halogen-free package
RDSON(MAX)
35mΩ
Equivalent Circuit
MTB35N04J3
Outline
TO-252
GGate DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTB35N04J3
Limits
40
±20
12
8
48
10
5
2
36
12
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification




Cystech Electonics

MTB35N04J3 Datasheet Preview

MTB35N04J3 Datasheet

N -Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e5e3Jt43U.com
Issued Date : 2009.03.11
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
4.1
80
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
40
1.8
-
-
-
-
12
-
-
- -V
2.3 3.2 V
19 - S
-
±100
nA
- 1 μA
- 25 μA
- -A
30 35 mΩ
40 50 mΩ
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
- 9.1 -
- 2.3 - nC
-3-
- 2.5 -
-
-
7.5
12
-
-
ns
-4-
- 796 -
- 84 - pF
- 59 -
- 2.5 - Ω
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
12
48
A
VSD *1
- - 1.3 V
trr - 15 - ns
Qrr - 8 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=10A
VGS=±20, VDS=0
VDS =32V, VGS =0
VDS =30V, VGS =0, Tj=125°C
VDS =10V, VGS =10V
VGS =10V, ID=10A
VGS =7V, ID=8A
ID=10A, VDS=20V, VGS=10V
VDS=20V, ID=1A, VGS=10V,
RG=6Ω
VGS=0V, VDS=20V, f=1MHz
VGS=15mV,VDS=0, f=1MHz
IF=IS, VGS=0V
IF=5A, dIF/dt=100A/μs
Ordering Information
Device
MTB35N04J3
Package
TO-252
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Marking
B35N04
MTB35N04J3
CYStek Product Specification


Part Number MTB35N04J3
Description N -Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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