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Cystech Electonics

MTB60A03KQ8 Datasheet Preview

MTB60A03KQ8 Datasheet

Dual N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C122Q8
Issued Date : 2015.05.25
Revised Date :
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB60A03KQ8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
ESD Protected
Pb-free & Halogen-free package
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=3.6A
RDS(ON)@VGS=4.5V, ID=3.6A
RDS(ON)@VGS=4V, ID=3.6A
30V
4.8A
3.8A
31 mΩ(typ)
46 mΩ(typ)
53 mΩ(typ)
Symbol
MTB60A03KQ8
Outline
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTB60A03KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB60A03KQ8
CYStek Product Specification




Cystech Electonics

MTB60A03KQ8 Datasheet Preview

MTB60A03KQ8 Datasheet

Dual N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C122Q8
Issued Date : 2015.05.25
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TA=25°C, VGS=10V
(Note 2) TA=70°C, VGS=10V
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=2mH, ID=4.8A, RG=25Ω
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Operating Junction and Storage Temperature
Tj, Tstg
Limits
30
±20
4.8
3.8
20
4.8
23
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single Rth,j-a
operation
Note : 1.Pulse width limited by maximum junction temperature.
2. Surface mounted on 1 in2 pad of 2 oz copper, t10s.
3. Surface mounted on minimum copper pad, pulse width10s.
Value
40
62.5
78
135
(Note 2)
(Note 3)
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
30 -
1.0 -
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
-6
-
S VDS =5V, ID=3.6A
- - ±10
VGS=±16V
- - 1 μA VDS =30V, VGS =0V
--
5
VDS =24V, VGS =0V, Tj=55°C
- 31
40
VGS =10V, ID=3.6A
- 46 60 mΩ VGS =4.5V, ID=3.6A
- 53
75
VGS =4V, ID=3.6A
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
- 2.8
- 0.9
- 0.7
- 169
- 58
- 34
-
-
-
-
-
-
nC ID=3.5A, VDS=15V, VGS=5V
pF VGS=0V, VDS=10V, f=1MHz
MTB60A03KQ8
CYStek Product Specification


Part Number MTB60A03KQ8
Description Dual N-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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