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MTB9D0N10RQ8 - N-Channel Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 12A 9.6A 5.6 mΩ(typ) 7.3 mΩ(typ) Symbol MTB9D0N10RQ8 Outline DD SOP-8 DD G：Gate D：Drain S：Source Pin 1 G SSS Ordering Information Device MTB9D0N10RQ8-0-T3-G Package Shipping SOP-8 (RoHS compliant & H.

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Datasheet Details

Part number MTB9D0N10RQ8
Manufacturer Cystech Electonics
File Size 428.38 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB9D0N10RQ8 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB9D0N10RQ8 Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 12A 9.6A 5.6 mΩ(typ) 7.
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