* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 12A 9.6A 5
MTB9D0N10RQ8 Datasheet (428.38 KB)
MTB9D0N10RQ8
Cystech Electonics
428.38 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB9D0N10RQ8 Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : .
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