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Cystech Electonics

MTBH0N25L3 Datasheet Preview

MTBH0N25L3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C895L3
Issued Date : 2016.11.26
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
MTBH0N25L3
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=1A
RDSON@VGS=4.5V, ID=1A
250V
1.2A
722mΩ (typ.)
732mΩ (typ.)
Equivalent Circuit
MTBH0N25L3
GGate DDrain
SSource
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTBH0N25L3-0-T3-G
Package
SOT-223
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25L3
Preliminary
CYStek Product Specification




Cystech Electonics

MTBH0N25L3 Datasheet Preview

MTBH0N25L3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=0.1mH, ID=5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TA=25
Total Power Dissipation @TA=70
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C895L3
Issued Date : 2016.11.26
Revised Date :
Page No. : 2/9
Limits
250
±20
1.2
0.96
8
5
1.25
0.625
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : When mounted on a 1 in2 pad of 2 oz. copper.
Symbol
RθJC
RθJA
Value
16.7
50 (Note)
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
250
1
-
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
4 - S VDS =10V, ID=1A
-
±100
nA VGS=±20V, VDS=0V
-
-
1
25
μA
VDS =200V, VGS =0V
VDS =200V, VGS =0V, Tj=125°C
722
732
920
980
mΩ
VGS =10V, ID=1A
VGS =4.5V, ID=1A
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
- 12.3 18
- 1.5 2.5 nC VDS=200V, VGS=10V, ID=1A
- 3.5 5.5
- 6.6 10
-
-
16
29.6
24
44
ns
VDS=12V, ID=1A, VGS=10V,
RG=6Ω
- 23 35
MTBH0N25L3
Preliminary
CYStek Product Specification


Part Number MTBH0N25L3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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