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MTBH0N25L3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ. ) 732mΩ (typ. ) Equivalent Circuit MTBH0N25L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTBH0N25L3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant pr.

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Datasheet Details

Part number MTBH0N25L3
Manufacturer Cystech Electonics
File Size 392.82 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBH0N25L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C895L3 Issued Date : 2016.11.26 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTBH0N25L3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ.) 732mΩ (typ.