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Cystech Electonics

MTN4N65BFP Datasheet Preview

MTN4N65BFP Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C990FP
Issued Date : 2015.04.07
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTN4N65BFP
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
RDS(ON)@VGS=10V, ID=2A
650V
4A
2.4A
2Ω(typ)
Description
The MTN4N65BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Applications
Adapter
Switching Mode Power Supply
Ordering Information
Device
MTN4N65BFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN4N65BFP
CYStek Product Specification




Cystech Electonics

MTN4N65BFP Datasheet Preview

MTN4N65BFP Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C990FP
Issued Date : 2015.04.07
Revised Date :
Page No. : 2/ 9
Symbol
Outline
MTN4N65BFP
TO-220FP
GGate
DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
ID
IDM
EAS
IAS
EAR
TL
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=3A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25.
Limits
650
±30
4*
2.4*
16*
36
3
3.4
300
34
0.27
-55~+150
Unit
V
V
A
A
A
mJ
A
mJ
°C
W
W/°C
°C
MTN4N65BFP
CYStek Product Specification


Part Number MTN4N65BFP
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 9 Pages
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