Datasheet4U Logo Datasheet4U.com

MTN4N65BF3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=10V, ID=2A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package 650V 4A 2.5A 2Ω(typ).

📥 Download Datasheet

Datasheet Details

Part number MTN4N65BF3
Manufacturer CYStech
File Size 357.89 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N65BF3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTN4N65BFP N-Channel Enhancement Mode Power MOSFET Cystech Electonics
MTN4N65CE3 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTN4N65CFP N-Channel Enhancement Mode Power MOSFET Cystech Electonics
MTN4N65CI3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics
MTN4N65CJ3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

Other Datasheets by CYStech

Part Number Description
MTN4N65BI3 N-Channel Enhancement Mode Power MOSFET
MTN4N60BE3 N-Channel Enhancement Mode Power MOSFET
MTN4N60BFP N-Channel Enhancement Mode Power MOSFET
MTN4N60BI3 N-Channel Enhancement Mode Power MOSFET
MTN4N60BJ3 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C990F3 Issued Date : 2015.12.24 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTN4N65BF3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C Features RDS(ON)@VGS=10V, ID=2A • Low On Resistance • Simple Drive Requirement • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package 650V 4A 2.