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MTN4N65I3 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MTN4N65I3
Manufacturer Cystech Electonics
File Size 275.77 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N65I3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C797I3 Issued Date : 2010.03.29 Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N65I3 BVDSS : 650V RDS(ON) : 3.0Ω(typ.) ID : 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.