900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cystech Electonics

MTN4N65CJ3 Datasheet Preview

MTN4N65CJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C080J3
Issued Date : 2016.06.27
Revised Date :
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTN4N65CJ3
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
Features
RDS(ON)@VGS=10V, ID=2A
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free Lead Plating and Halogen-free Package
650V
4A
2.4A
1.8Ω(typ)
Applications
Open Framed Power Supply
Adapter
STB
Symbol
MTN4N65CJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTN4N65CJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4N65CJ3
CYStek Product Specification




Cystech Electonics

MTN4N65CJ3 Datasheet Preview

MTN4N65CJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C080J3
Issued Date : 2016.06.27
Revised Date :
Page No. : 2/11
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
*100% UIS testing in condition of VDD=50V, L=8mH, VG=10V, IL=2A, Rated VDS=650V
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=2A, VDD=50V, L=8mH, VG=10V, starting TJ=+25.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
TL
PD
Tj, Tstg
Limits
650
±30
4*
2.4*
16*
2
16
4.8
300
48
0.38
-55~+150
Unit
V
A
mJ
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.6
50
110
1. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C.
2. When the device is mounted on the minimum pad size recommended (PCB mount) with TA=25°C.
Unit
°C/W
MTN4N65CJ3
CYStek Product Specification


Part Number MTN4N65CJ3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 11 Pages
PDF Download

MTN4N65CJ3 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 MTN4N65CJ3 N-Channel Enhancement Mode Power MOSFET
Cystech Electonics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy