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MTN4N65CJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=10V, ID=2A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free Lead Plating and Halogen-free Package 650V 4A 2.4A 1.8Ω(typ).

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Datasheet Details

Part number MTN4N65CJ3
Manufacturer Cystech Electonics
File Size 423.96 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N65CJ3 Datasheet

Full PDF Text Transcription for MTN4N65CJ3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTN4N65CJ3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C080J3 Issued Date : 2016.06.27 Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N65CJ3 BVDSS ID @VGS=10V,...

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N-Channel Enhancement Mode Power MOSFET MTN4N65CJ3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C Features RDS(ON)@VGS=10V, ID=2A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free Lead Plating and Halogen-free Package 650V 4A 2.4A 1.

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