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Cystech Electonics

MTN4N65F3 Datasheet Preview

MTN4N65F3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date :
Page No. : 1/ 11
N-Channel Enhancement Mode Power MOSFET
MTN4N65F3
BVDSS : 650V
RDS(ON) : 3Ω (typ.)
ID : 4A
Features
Low On Resistance
Simple Drive Requirement
Fast Switching Characteristic
Pb-free lead plating and RoHS compliant package
Applications
Adapter
Switching Mode Power Supply
Symbol
MTN4N65F3
Outline
TO-263
GGate DDrain SSource
G DS
Ordering Information
Device
MTN4N65F3-0-T7-S
Package
Shipping
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4N65F3
CYStek Product Specification




Cystech Electonics

MTN4N65F3 Datasheet Preview

MTN4N65F3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date :
Page No. : 2/ 11
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
TL
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25.
3. ISD4A, dI/dt100A/μs, VDDBVDSS, starting TJ=+25.
Limits
650
±30
4*
2.4*
16*
69
4
3.4
4.5
300
100
0.8
-55~+150
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.25
62.5
Unit
°C/W
°C/W
MTN4N65F3
CYStek Product Specification


Part Number MTN4N65F3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 11 Pages
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