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Cystech Electonics

MTN4N65FP Datasheet Preview

MTN4N65FP Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C797FP
Issued Date : 2010.06.09
Revised Date : 2012.01.13
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN4N65FP
BVDSS : 650V
RDS(ON) : 3Ω (typ.)
ID : 4A
Description
The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Applications
Adapter
Switching Mode Power Supply
Symbol
MTN4N65FP
Outline
TO-220FP
(C forming)
TO-220FP
(S forming)
GGate
DDrain
SSource
MTN4N65FP
GDS
GDS
CYStek Product Specification




Cystech Electonics

MTN4N65FP Datasheet Preview

MTN4N65FP Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C797FP
Issued Date : 2010.06.09
Revised Date : 2012.01.13
Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
TL
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25.
3. ISD4A, dI/dt100A/μs, VDDBVDSS, starting TJ=+25.
Limits
650
±30
4*
2.4*
16*
69
4
3.4
4.5
300
34
0.27
-55~+150
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3.68
62.5
Unit
°C/W
°C/W
MTN4N65FP
CYStek Product Specification


Part Number MTN4N65FP
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 10 Pages
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