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MTN4N65I3 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MTN4N65I3
Manufacturer Cystech Electonics
File Size 275.77 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N65I3 Datasheet

Full PDF Text Transcription for MTN4N65I3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTN4N65I3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C797I3 Issued Date : 2010.03.29 Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N65I3 BVDSS : ...

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No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N65I3 BVDSS : 650V RDS(ON) : 3.0Ω(typ.) ID : 4A Description The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.