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Cystech Electonics

MTN4N65I3 Datasheet Preview

MTN4N65I3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C797I3
Issued Date : 2010.03.29
Revised Date : 2013.10.18
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTN4N65I3
BVDSS : 650V
RDS(ON) : 3.0Ω(typ.)
ID : 4A
Description
The MTN4N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Applications
Open Framed Power Supply
Adapter
STB
Symbol
MTN4N65I3
Outline
TO-251
TO-251S
GGate
DDrain
SSource
MTN4N65I3
G DS
G DS
CYStek Product Specification




Cystech Electonics

MTN4N65I3 Datasheet Preview

MTN4N65I3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C797I3
Issued Date : 2010.03.29
Revised Date : 2013.10.18
Page No. : 2/11
Ordering Information
Device
MTN4N65I3-0-UA-G
MTN4N65I3S-0-UA-G
Package
TO-251
(RoHS compliant and halogen-free package)
TO-251S
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25)
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
TL
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25.
3. ISD4A, dI/dt100A/μs, VDDBVDSS, starting TJ=+25.
Limits
650
±30
4
2.4
16
69
4
4.8
4.5
300
1.14
48
0.38
-55~+150
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN4N65I3
Symbol
Rth,j-c
Rth,j-a
Value
2.6
110
Unit
°C/W
°C/W
CYStek Product Specification


Part Number MTN4N65I3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 11 Pages
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