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BTC3906N3 - NPN Transistor

Description

The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage.

Features

  • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA).
  • Complement to BTA1514N3 Symbol BTC3906N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient (Note ) Thermal Resistance, Junction to Case Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Ju.

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Datasheet preview – BTC3906N3

Datasheet Details

Part number BTC3906N3
Manufacturer Cystech Electonics Corp
File Size 327.59 KB
Description NPN Transistor
Datasheet download datasheet BTC3906N3 Datasheet
Additional preview pages of the BTC3906N3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208N3 www.DataSheet4U.com Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 1/4 BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage.
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