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BTC5706I3 - NPN Transistor

Features

  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation.
  • Large current capability.
  • RoHS compliant package.

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Datasheet Details

Part number BTC5706I3
Manufacturer Cystech Electonics Corp
File Size 254.85 KB
Description NPN Transistor
Datasheet download datasheet BTC5706I3 Datasheet

Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Spec. No. : C819I3 Issued Date : 2004.12.16 Revised Date :2011.11.18 Page No. : 1/7 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation • Large current capability • RoHS compliant package Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Symbol BTC5706I3 Outline TO-251AB TO-251AA B:Base C:Collector E:Emitter B CE BCE BTC5706I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C819I3 Issued Date : 2004.12.16 Revised Date :2011.11.18 Page No.
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