BTC5706J3
BTC5706J3 is NPN Transistor manufactured by Cystech Electonics Corp.
Features
- Low collector-to-emitter saturation voltage
- High-speed switching
- High allowable power dissipation
- Large current capability
Applications
- DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
Symbol
Outline
TO-252
B:Base C:Collector E:Emitter
B C E B C E
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg
Spec. No. : C819J3 .. Issued Date : 2004.12.18 Revised Date : Page No. : 2/5
Limits 80 80 60 6 5 7.5 (Note 1) 1.2 0.8 15 156 8.33 150 -55~+150
Unit V V V V A A W °C/W °C/W °C °C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Characteristics (Ta=25°C)
Symbol BVCBO BVCES
- BVCEO BVEBO ICBO IEBO
- VCE(sat) 1
- VCE(sat) 2
- VBE(sat)
- h FE f T Cob ton tstg tf Min. 80 80 60 6 200 Typ. 110 200 0.89 400 15 35 300 20 Max. 1 1 135 240 1.2 560 Unit V V V V µA µA m V m V V MHz p F ns ns ns Test Conditions IC=10µA, IE=0 IC=100µA, RBE=0 IC=1m A, IB=0 IC=10µA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 IC=1A, IB=50m A IC=2A, IB=100m A IC=2A, IB=100m A VCE=2V, IC=500m A VCE=10V, IC=500m A VCB=10V, f=1MHz VCC=25V, IC=10IB1=-10IB2=1A, RL=25Ω
- Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(m V) 10000
Spec. No. : C819J3 .. Issued Date : 2004.12.18 Revised Date : Page No. : 3/5
Saturation Voltage vs Collector Current
Current Gain---HFE
VCESAT@IC=50IB
VCE=2V...