BTC5096WC3 Datasheet | Cystech Electonics Corp

Description The BTC5096WC3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline SOT-523 B：Base C：Collector E：Emitter Features - Low Noise and High Gain: - NF=1.4d B, TYP. @ VCE=2V, Ic=4.2m A, f=0.9GHz Ga=12d B, TYP. @ VCE=2V, Ic=4.2m A, f=0.9GHz ∣S21∣² =13.5d B @ VCE =5V, Ic =4.5m A, f=0.9GHz Applications - Low noise and high gain amplifiers & Oscillator buffer amplifiers - Cordless Phone : LNA , MIX ,and OSC - Remote Controller Absolute Maximum Ratings - Maximum Ratings (Ta=25°C) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Pd Tj Tstg Limits 10 18 2.5 20 100 125 -50~125 Unit V V V m A m W °C °C - 1 Note: - 1 Here we define the point DC current gain drops off. CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics - Characterization Information (Ta=25°C) Parameters Collector Cutoff Current Emitter Cutoff Current DC Current Gain Cutoff Frequency Minimum Noise Figure Associated Gain Insertion Gain |S21|2 In 50 Ohm system Output Capacitance Conditions Symbol Min VCB =3V, IE=0 ICBO VEB =1V IEBO VCE =2V, IC =1m A h FE(1) 52 VCE =6V, IC =7m A h FE(2) 52 VCE =1V, IC =10m A f T VCE =3V, IC =12m A VCE =2V, IC =4.2m A, f =0.9GHz NFmin VCE =5V, IC =4.5m A, f =0.9GHz VCE =2V, IC =4.2m A, f =0.9GHz GA VCE =5V, IC =4.5m A, f =0.9GHz VCE =2V, IC =4.2m A, f =0.9GHz |S21|2 VCE =5V, IC =4.5m A, f =0.9GHz VCB =10V, IE=0, f = 0.9GHz Cob - Spec. No. : C212WC3 .. Issued Date : 2003.08.15 Revised Date : Page No. : 2/8 Typ. Max Unit 1 µA 1 µA 270 7.6 GHz 9 GHz 1.4 d B 1.6 d B 12 d B 13.5 d B 12.8 d B 13.5 d B 0.7 1.0 p F Classification Of h FE(1) Rank Range K 52~120 P 82~180 Q 120~270 S-Parameters FREQ. (GHz) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 - VC=2V, IC=4.2m A, IB=60µA S11 Mag 0.604...