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BTC5103J3 - NPN Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.15 V (typical), at IC / IB = 3A / 0.15A.
  • High Switching Speed.
  • Wide SOA.
  • Complementary to BTA1952J3 Symbol BTC5103J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limi.

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Datasheet Details

Part number BTC5103J3
Manufacturer Cystech Electonics Corp
File Size 171.80 KB
Description NPN Transistor
Datasheet download datasheet BTC5103J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. High Speed Switching Transistor Spec. No. : C651J3 www.DataSheet4U.com Issued Date : 2003.04.24 Revised Date : Page No. : 1/3 BTC5103J3 Features • Low VCE(sat), VCE(sat)=0.15 V (typical), at IC / IB = 3A / 0.15A • High Switching Speed • Wide SOA • Complementary to BTA1952J3 Symbol BTC5103J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 100 60 5 5 10 1 10 150 -55~+150 Unit V V V *1 *2 A W °C °C Note : *1. Single Pulse Pw=100ms *2. Printed circuit board, 1.