BTC5103I3
BTC5103I3 is NPN Transistor manufactured by Cystech Electonics Corp.
Features
- Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A
- High Switching Speed
- Wide SOA
- plementary to BTA1952I3
- Ro HS pliant package
BVCEO IC RCESAT
60V 5A 110mΩ
Symbol
Outline
TO-251
B:Base C:Collector E:Emitter
B C CE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 100 60 6 5 9
- 1 1 30
- 2 150 -55~+150 Unit V V V A W °C °C
Note :
- 1. Single Pulse Pw=100ms
- 2. Printed circuit board, 1.7mm thick, collector copper plating 10mm- 10mm or larger
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat)
- VBE(sat)
- h FE 1
- h FE 2 f T Cob Min. 100 60 6 82 30 Typ. 0.33 30 80 Max. 10 10 0.4 1.2 270 Unit V V V μA μA V V MHz p F
Spec. No. : C651I3 .. Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 2/5
Test Conditions IC=1m A, IE=0 IC=1m A, IB=0 IE=1m A, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=2V, IC=1A VCE=2V, IC=3A VCE=5V, IC=1A, f=30MHz VCB=10V, f=1MHz
- Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Ordering Information
Device BTC5103I3 Package TO-251 (Ro HS pliant) Shipping 80 pcs / tube, 50 tubes / box Marking C5103
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 10000 VCE(SAT) Saturation Voltage---(m V) Current Gain---HFE 1000
IC=20IB
Spec. No. : C651I3 .. Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. :...