• Part: BTC5103I3
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Cystech Electonics Corp
  • Size: 273.67 KB
Download BTC5103I3 Datasheet PDF
Cystech Electonics Corp
BTC5103I3
BTC5103I3 is NPN Transistor manufactured by Cystech Electonics Corp.
Features - Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A - High Switching Speed - Wide SOA - plementary to BTA1952I3 - Ro HS pliant package BVCEO IC RCESAT 60V 5A 110mΩ Symbol Outline TO-251 B:Base C:Collector E:Emitter B C CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 100 60 6 5 9 - 1 1 30 - 2 150 -55~+150 Unit V V V A W °C °C Note : - 1. Single Pulse Pw=100ms - 2. Printed circuit board, 1.7mm thick, collector copper plating 10mm- 10mm or larger CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) - h FE 1 - h FE 2 f T Cob Min. 100 60 6 82 30 Typ. 0.33 30 80 Max. 10 10 0.4 1.2 270 Unit V V V μA μA V V MHz p F Spec. No. : C651I3 .. Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 2/5 Test Conditions IC=1m A, IE=0 IC=1m A, IB=0 IE=1m A, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=2V, IC=1A VCE=2V, IC=3A VCE=5V, IC=1A, f=30MHz VCB=10V, f=1MHz - Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Ordering Information Device BTC5103I3 Package TO-251 (Ro HS pliant) Shipping 80 pcs / tube, 50 tubes / box Marking C5103 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 10000 VCE(SAT) Saturation Voltage---(m V) Current Gain---HFE 1000 IC=20IB Spec. No. : C651I3 .. Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. :...