BTC5181WC3 - NPN Transistor

Cystech Electonics Corp

General Description

The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application.

Key Features

Low current consumption and high gain: ∣S21e∣² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz ∣S21e∣² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz.
Super mini-mold package.

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BTC5181WC3 npn transistor by Cystech Electonics Corp - Datasheet Preview

Datasheet Details

Part number	BTC5181WC3
Manufacturer	Cystech Electonics Corp
File Size	179.81 KB
Description	NPN Transistor
Datasheet	BTC5181WC3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. High Frequency NPN Epitaxial Planar Transistor Spec. No. : C213WC3 www.DataSheet4U.com Issued Date : 2003.08.15 Revised Date : Page No. : 1/3 BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline SOT-523 BTC5181WC3 B：Base C：Collector E：Emitter Features • Low current consumption and high gain: ∣S21e∣² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz ∣S21e∣² = 11dB ( typ.