BTC5179S3 Datasheet | Cystech Electonics Corp

Description The BTC5179S3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline SOT-323 B：Base C：Collector E：Emitter Features - Low current consumption and high gain: ∣S21e∣² = 12d B ( typ. ) at VCE= 2 V, IC= 7 m A, f = 2 GHz ∣S21e∣² = 11d B ( typ. ) at VCE= 1 V, IC= 5 m A, f = 2 GHz - Super mini-mold package Applications - Low noise and high gain amplifiers & Oscillator buffer amplifiers Absolute Maximum Ratings (TA=25℃) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Pd Tj Tstg Limits 3 5 2 10 30 150 -65~+150 Unit V V V m A m W °C °C CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (TA=25°C) Parameters Collector Cutoff Current Emitter Cutoff Current DC Current Gain Cutoff Frequency Noise Figure Insertion Gain |S21e|2 in 50Ω system Output Capacitance Conditions VCB =3V, IE=0 VEB =1V VCE =2V, IC =7m A (Note 1) VCE =2V, IC =7m A, f =2GHz VCE =1V, IC =5m A, f =2GHz VCE =2V, IC =3m A, f =2GHz VCE =1V, IC =3m A, f =2GHz VCE =2V, IC =7m A, f =2GHz VCE =1V, IC =5m A, f =2GHz VCB =2V, IE=0, f = 1MHz Symbol ICBO IEBO h FE f T NF |S21e| 2 Cob Min 70 10 8.5 - Spec. No. : C213S3 .. Issued Date : 2003.04.25 Revised Date : Page No. : 2/3 Typ. 12 10 1.5 1.5 12 11 0.7 Max 100 100 140 15.5 13 2.0 2.0 1.0 Unit n A n A GHz GHz d B d B d B d B p F Note 1: Pulse test: Pulse width≤ 380µs, duty cycle≤ 2%. CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C213S3 .. Issued Date : 2003.04.25 Revised Date : Page No. : 3/3 Marking: A1 Q Lp detail Z W B 1 e1 e D bp TE T1 θ He 0 1 scale 2 mm 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 v...