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BTC5103M3 - NPN Transistor

Key Features

  • High IC, IC(DC)=5A.
  • Low VCE(sat), 0.3V typically.
  • Good current gain linearity Symbol BTC5103M3 Outline SOT-89 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limit 80 60 5 5 10 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V.

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Datasheet Details

Part number BTC5103M3
Manufacturer Cystech Electonics Corp
File Size 180.73 KB
Description NPN Transistor
Datasheet download datasheet BTC5103M3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C651M3 www.DataSheet4U.com Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 BTC5103M3 Features • High IC, IC(DC)=5A • Low VCE(sat), 0.3V typically • Good current gain linearity Symbol BTC5103M3 Outline SOT-89 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limit 80 60 5 5 10 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W °C/W °C/W °C/W °C °C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature RθJA Tj Tstg Note : 1.