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BTC5103M3 - NPN Transistor

Datasheet Summary

Features

  • High IC, IC(DC)=5A.
  • Low VCE(sat), 0.3V typically.
  • Good current gain linearity Symbol BTC5103M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limit 80 60 5 5 10 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V.

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Datasheet Details

Part number BTC5103M3
Manufacturer Cystech Electonics Corp
File Size 180.73 KB
Description NPN Transistor
Datasheet download datasheet BTC5103M3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C651M3 www.DataSheet4U.com Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 BTC5103M3 Features • High IC, IC(DC)=5A • Low VCE(sat), 0.3V typically • Good current gain linearity Symbol BTC5103M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limit 80 60 5 5 10 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W °C/W °C/W °C/W °C °C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature RθJA Tj Tstg Note : 1.
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