BTC5103M3 Datasheet | Cystech Electonics Corp

Features - High IC, IC(DC)=5A - Low VCE(sat), 0.3V typically - Good current gain linearity Symbol Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limit 80 60 5 5 10 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W °C/W °C/W °C/W °C °C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature RθJA Tj Tstg Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm 3. When mounted on ceramic with area measuring 40×40×1 mm CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO - VCE(sat) - VBE(sat) - VBE(on) - h FE 1 - h FE 2 f T Min. 80 60 5 82 80 Typ. 0.3 8 Max. 10 5 10 1 1.5 1.5 390 Unit V V V µA m A µA V V V MHz Spec. No. : C651M3 .. Issued Date : 2003.11.07 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=60V. IE=0 VCE=60V. IB=0 VEB=5V,IC=0 IC=2A, IB=200m A IC=2A, IB=200m A VCE=2V, IC=1A VCE=5V, IC=500m A VCE=2V, IC=1A VCE=5V, IC=500m A, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE 1 Rank Range P 82~180 Q 120~270 R 180~390 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(m V) 10000 Spec. No. : C651M3 .. Issued Date : 2003.11.07 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE VBE(SAT)@IC=10IB VCE=4V...