Datasheet Details
| Part number | 2SB507 |
|---|---|
| Manufacturer | DC COMPONENTS |
| File Size | 195.44 KB |
| Description | PNP Transistor |
| Datasheet | 2SB507-DCCOMPONENTS.pdf |
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Overview: DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SB507 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR.
| Part number | 2SB507 |
|---|---|
| Manufacturer | DC COMPONENTS |
| File Size | 195.44 KB |
| Description | PNP Transistor |
| Datasheet | 2SB507-DCCOMPONENTS.pdf |
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Designed for use in power amplifier and switching circuits.
Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD TJ TSTG Rating Unit -60 V -60 V -5 V -3 A 2 W 30 W +150 oC -55 to +150 oC TO-220AB .405(10.28) .185(4.70) .380(9.66) Φ.151 Φ(3.83) .173(4.40) Typ .055(1.39) .045(1.15) .625(15.87) .570(14.48) 123 .295(7.49) .220(5.58) .350(8.90) .330(8.38) .640 (16.25) Typ .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 (2.54) Typ .024(0.60) .014(0.35) Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Collector-Base Breakdown Volatge BVCBO -60 Collector-Emitter Breakdown Voltage BVCEO -60 Emitter-Base Breakdown Voltage BVEBO -5 Collector Cutoff Current ICBO - ICEO - Emitter Cutoff Current IEBO - Collector-Emitter Saturation Voltage(1) VCE(sat) - Base-Emitter On Voltage(1) VBE(on) - DC Current Gain(1) hFE1 40 hFE2 40 Transition Frequency fT - (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Typ Max Unit Test Conditions - - V IC=-1mA, IE=0 - - V IC=-10mA, IB=0 - - V IE=-1mA, IC=0 - -0.1 mA VCB=-20V, IE=0 - -5 mA VCE=-60V, IB=0 - -1 mA VEB=-4V, IC=0 - -1 V IC=-2A, IB=-0.2A - -1.5 V IC=-1A, VCE=-2V - - - IC=-0.1A, VCE=-2V - 320 - IC=-1A, VCE=-2V 8 - MHz IC=-500mA, VCE=-5V, f=100MHz Classification of hFE2 Rank C D Range 40~80 60~120 E 100~200 F 160~320
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB507 | PNP Transistor | INCHANGE |
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