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2SB507 - PNP Transistor

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Description

Designed for use in power amplifier and switching circuits.

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Datasheet Details

Part number 2SB507
Manufacturer DC COMPONENTS
File Size 195.44 KB
Description PNP Transistor
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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SB507 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in power amplifier and switching circuits. Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD TJ TSTG Rating Unit -60 V -60 V -5 V -3 A 2 W 30 W +150 oC -55 to +150 oC TO-220AB .405(10.28) .185(4.70) .380(9.66) Φ.151 Φ(3.83) .173(4.40) Typ .055(1.39) .045(1.15) .625(15.87) .570(14.48) 123 .295(7.49) .220(5.58) .350(8.90) .330(8.38) .640 (16.25) Typ .
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