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DG4N65 - N-CHANNEL ENHANCEMENT MODE MOSFET

The DG4N65 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

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Official preview page of the DG4N65 N-CHANNEL ENHANCEMENT MODE MOSFET datasheet (DGME).

Datasheet Details

Part number DG4N65
Manufacturer DGME
File Size 1.22 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG4N65-DGME.pdf
Additional preview pages of the DG4N65 datasheet.

DG4N65 Product details

Description

DG4N65N，， ，，，。 ，，。 DG4N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 4.0 2.8 12 V A Ω pF Symbol Package 1 /11

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