MJ10022-MJ10023
High-reliability discrete products
and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
FEATURES
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
• Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Collector emitter voltage
Collector emitter voltage
Emitter base voltage
Collector current-Continuous
-Peak
Base current
Total power dissipation @ TC = 25°C
Total power dissipation @ TC = 100°C
Derate above 25°C
Operating and storage temperature range
Thermal resistance, junction to case
Symbol
VCEV
VCEO(sus)
VEBO
IC
ICM
IB
PD
TJ, Tstg
RѲJC
MJ10022
MJ10023
450
600
350
400
8.0
40
80
20
250
143
1.43
-65 to +200
0.7
Unit
V
V
V
A
A
W
W
W/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector emitter sustaining voltage
(IC = 100mA, IB = 0, Vclamp = Rated VCEO)
Collector cutoff current
(VCE = Rated VCEV, RBE = 50Ω, TC = 100°C )
MJ10022
350
MJ10023
VCEO(sus)
400
ICER
-
Collector cutoff current
(VCEV = Rated VCEV, VBE(off) = 1.5V)
(VCEV = Rated VCEV, VBE(off) = 1.5V, TC = 150°C)
ICEV
-
-
Emitter cutoff current
(VEB = 2.0V, IC = 0)
ON CHARACTERISTICS (1)
IEBO
-
DC current gain
(IC = 10A, VCE = 5.0V)
Collector emitter saturation voltage
(IC = 20A, IB = 1.0A)
(IC = 40A, IB = 5.0A)
(IC = 20A, IB = 1.0mA, TC = 100°C)
Base-emitter saturation voltage
(IC = 20A, IB = 1.2A)
(IC = 20A, IB = 1.2A, TC = 100°C)
hFE
60
-
VCE(sat)
-
-
VBE(sat)
-
-
Diode forward voltage
(IF = 20A)
Vf
-
-
V
-
5.0
mA
0.25
mA
5.0
175
mA
-
600
2.2
V
5.0
2.5
2.5
V
2.5
V
5.0
Rev. 20200619
