• Part: MJ10023
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: DIGITRON
  • Size: 490.41 KB
Download MJ10023 Datasheet PDF
DIGITRON
MJ10023
MJ10023 is NPN Transistor manufactured by DIGITRON.
- Part of the MJ10022 comparator family.
FEATURES - Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. - Available as non-Ro HS (Sn/Pb plating), standard, and as Ro HS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector emitter voltage Collector emitter voltage Emitter base voltage Collector current-Continuous -Peak Base current Total power dissipation @ TC = 25°C Total power dissipation @ TC = 100°C Derate above 25°C Operating and storage temperature range Thermal resistance, junction to case Symbol VCEV VCEO(sus) VEBO IC ICM IB TJ, Tstg RѲJC MJ10022 40 80 250 143 1.43 -65 to +200 Unit V V V A W W W/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector emitter sustaining voltage (IC = 100m A, IB = 0, Vclamp = Rated VCEO) Collector cutoff current (VCE = Rated VCEV, RBE = 50Ω, TC = 100°C ) MJ10022 VCEO(sus) ICER - Collector cutoff current (VCEV = Rated VCEV, VBE(off) = 1.5V) (VCEV = Rated VCEV, VBE(off) = 1.5V, TC = 150°C) ICEV - - Emitter cutoff current (VEB = 2.0V, IC = 0) ON CHARACTERISTICS (1) IEBO - DC current gain (IC = 10A, VCE = 5.0V) Collector emitter saturation voltage (IC = 20A, IB = 1.0A) (IC = 40A, IB = 5.0A) (IC = 20A, IB = 1.0m A, TC = 100°C) Base-emitter saturation voltage (IC = 20A, IB = 1.2A) (IC = 20A, IB = 1.2A, TC = 100°C) h...