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DIGITRON

MJ10023 Datasheet Preview

MJ10023 Datasheet

NPN Transistor

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MJ10022-MJ10023
High-reliability discrete products
and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Collector emitter voltage
Collector emitter voltage
Emitter base voltage
Collector current-Continuous
-Peak
Base current
Total power dissipation @ TC = 25°C
Total power dissipation @ TC = 100°C
Derate above 25°C
Operating and storage temperature range
Thermal resistance, junction to case
Symbol
VCEV
VCEO(sus)
VEBO
IC
ICM
IB
PD
TJ, Tstg
RѲJC
MJ10022
MJ10023
450
600
350
400
8.0
40
80
20
250
143
1.43
-65 to +200
0.7
Unit
V
V
V
A
A
W
W
W/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector emitter sustaining voltage
(IC = 100mA, IB = 0, Vclamp = Rated VCEO)
Collector cutoff current
(VCE = Rated VCEV, RBE = 50Ω, TC = 100°C )
MJ10022
350
MJ10023
VCEO(sus)
400
ICER
-
Collector cutoff current
(VCEV = Rated VCEV, VBE(off) = 1.5V)
(VCEV = Rated VCEV, VBE(off) = 1.5V, TC = 150°C)
ICEV
-
-
Emitter cutoff current
(VEB = 2.0V, IC = 0)
ON CHARACTERISTICS (1)
IEBO
-
DC current gain
(IC = 10A, VCE = 5.0V)
Collector emitter saturation voltage
(IC = 20A, IB = 1.0A)
(IC = 40A, IB = 5.0A)
(IC = 20A, IB = 1.0mA, TC = 100°C)
Base-emitter saturation voltage
(IC = 20A, IB = 1.2A)
(IC = 20A, IB = 1.2A, TC = 100°C)
hFE
60
-
VCE(sat)
-
-
VBE(sat)
-
-
Diode forward voltage
(IF = 20A)
Vf
-
-
V
-
5.0
mA
0.25
mA
5.0
175
mA
-
600
2.2
V
5.0
2.5
2.5
V
2.5
V
5.0
Rev. 20200619




DIGITRON

MJ10023 Datasheet Preview

MJ10023 Datasheet

NPN Transistor

No Preview Available !

MJ10022-MJ10023
High-reliability discrete products
and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
DYNAMIC CHARACTERISTICS
Output capacitance
(VCB = 10V, IE = 0, ftest = 100kHz)
Cob
150
SWITCHING CHARACTERISTICS
Delay time
Rise time
Storage time
Fall time
td
-
(VCC = 250V, IC = 20A,
tr
-
IB1 = 1.0A, VBE(off) = 5.0V,
tp = 50µs, duty cycle ≤ 2%)
ts
-
tf
-
Note 1: Pulse test: pulse width = 5ms, duty cycle ≤ 2%.
Note 2: fT = │hfe│ * ftest
MECHANICAL CHARACTERISTICS
Case
TO-3
Marking
Alpha-numeric
Polarity
See below
Max
Unit
pF
600
0.2
1.5
µs
2.5
1.1
TO-3
Inches
Millimeters
Min Max Min Max
CD - 0.875 - 22.220
CH 0.250 0.380 6.860 9.650
HT 0.060 0.135 1.520 3.430
BW - 1.050 - 26.670
HD 0.131 0.188 3.330 4.780
LD 0.038 0.043 0.970 1.090
LL 0.312 0.500 7.920 12.700
BL 1.550 REF
39.370 REF
MHS 1.177 1.197 29.900 30.400
PS 0.420 0.440 10.670 11.180
S1 0.655 0.675 16.640 17.150
Rev. 20200619



Part Number MJ10023
Description NPN Transistor
Maker DIGITRON
Total Page 3 Pages
PDF Download

MJ10023 Datasheet PDF





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