Datasheet Details
| Part number | MJ10023 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 70.67 KB |
| Description | NPN SILICON POWER DARLINGTON TRANSISTOR |
| Datasheet | MJ10023-CentralSemiconductor.pdf |
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Overview: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3.
| Part number | MJ10023 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 70.67 KB |
| Description | NPN SILICON POWER DARLINGTON TRANSISTOR |
| Datasheet | MJ10023-CentralSemiconductor.pdf |
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The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEO VCEV VEBO IC ICM IB IBM PD TJ,Tstg ΘJC ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 400 600 8.0 40 80 20 40 250 -65 to +200 0.7 SYMBOL TEST CONDITIONS MIN MAX ICEV ICEV ICER IEBO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE VF Cob VCE=600V, VBE(OFF)=1.5V VCE=600V, VBE(OFF)=1.5V, TC=150°C VCE=600V, RBE=50Ω, TC=100°C VEB=2.0V IC=100mA IC=20A, IB=1.0A IC=20A, IB=1.0A, TC=100°C IC=40A, IB=5.0A IC=20A, IB=1.2A IC=20A, IB=1.2A, TC=100°C VCE=5.0V, IC=10A IF=20A VCB=10V, IE=0, f=1.0kHz 0.25 5.0 5.0 175 400 2.2 2.5 5.0 2.5 2.5 50 600 5.0 150 600 UNITS V V V A A A A W °C °C/W UNITS mA mA mA mA V V V V V V V pF (SEE REVERSE SIDE) R0 MJ10023 NPN POWER DARLINGTON TRANSISTOR ELECTRICAL CHARACTERISTICS (CONTINUED) SYMBOL td tr ts tf tsv tc tfi TEST CONDITIONS VCC=250V, IC=20A, IB1=1.0A, VBE(off)=5.0V VBE(off)=5.0V, tP=50µs, Duty Cycle ≤ 2.0% ICM=20A, VCEM=250V, IB1=1.0A, VBE(off)=5.0V, TC=100°C tsv ICM=20A, VCEM=250V, IB1=1.0A, tc VBE(off)=5.0V, TC=25°C tfi MIN TYP MAX UNITS - 0.03 0.2 µs - 0.40 1.2 µs - 0.90 2.5 µs - 0.30 0.9 µs - 1.9 4.4 µs - 0.6 2.0 µs - 0.3 - µs - 1.0 - µs - 0.3 - µs - 0.15 - µs TO-3 PACKAGE - MECHANICAL OUTLINE C D IJ A B E F G H 2 K L 1 SYMBOL A B (DIA) C D E F G H I J K (DIA) L DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 1.516 1.573 38.50 39.96 0.748 0.875 19.00 22.23 0.250 0.450 6.35 11.43 0.433 0.516
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ10023 | 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS | Motorola Inc |
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MJ10023 | NPN Transistor | INCHANGE |
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MJ10023 | NPN Transistor | DIGITRON |
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MJ10023 | Silicon NPN Transistor | NTE |
| Part Number | Description |
|---|---|
| MJ12005 | NPN Silicon Transistor |
| MJ12010 | NPN Silicon Transistor |