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MJ10023 - NPN SILICON POWER DARLINGTON TRANSISTOR

General Description

The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.

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DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEO VCEV VEBO IC ICM IB IBM PD TJ,Tstg ΘJC ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 400 600 8.0 40 80 20 40 250 -65 to +200 0.