MJ10023 Datasheet and Specifications PDF

The MJ10023 is a 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS.

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Part NumberMJ10023 Datasheet
ManufacturerMotorola Semiconductor
Overview . .
Part NumberMJ10023 Datasheet
DescriptionNPN SILICON POWER DARLINGTON TRANSISTOR
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications. MAXIMUM RATINGS . 0A, IB=1.2A IC=20A, IB=1.2A, TC=100°C VCE=5.0V, IC=10A IF=20A VCB=10V, IE=0, f=1.0kHz 0.25 5.0 5.0 175 400 2.2 2.5 5.0 2.5 2.5 50 600 5.0 150 600 UNITS V V V A A A A W °C °C/W UNITS mA mA mA mA V V V V V V V pF (SEE REVERSE SIDE) R0 MJ10023 NPN POWER DARLINGTON TRANSISTOR ELECTRI.
Part NumberMJ10023 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·With TO-3 packaging ·Very high DC current gain ·Fast turn-off times ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust de. mi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10023 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturati.
Part NumberMJ10023 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerNTE Electronics
Overview The MJ10023 is a silicon NPN Darlington transistor in a TO3 type package designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. This device is parti. D Continuous Collector Current: IC = 40A Absolute Maximum Ratings: Collector
*Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Collector
*Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . .