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DIGITRON

MJ11016 Datasheet Preview

MJ11016 Datasheet

NPN Transistor

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MJ11012, MJ11014,
MJ11016
High-reliability discrete products
and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total device dissipation @ TC = 25°C
Derate above 25°C @ TC = 100° C
Operating and storage temperature range
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes for ≤ 10s
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
RѲJC
TL
MJ11012
60
60
MJ11014
MJ11016
90
120
90
120
5
30
1
200
1.15
-55 to +200
0.87
275
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector emitter breakdown voltage (1)
MJ11012
60
-
IC = 100mA, IB = 0
MJ11014
V(BR)CEO
90
-
MJ11016
120
-
Collector emitter leakage current
VCE = 60V, RBE = 1kΩ
VCE = 90V, RBE = 1kΩ
VCE = 120V, RBE = 1kΩ
VCE = 60V, RBE = 1kΩ, TC = 150°C
VCE = 90V, RBE = 1kΩ, T C = 150°C
VCE = 120V, RBE = 1kΩ, TC = 150°C
MJ11012
-
1
MJ11014
-
1
MJ11016
ICER
-
1
MJ11012
-
5
MJ11014
-
5
MJ11016
-
5
Emitter cutoff current
VBE = 5V, IC = 0
IEBO
-
5
Collector emitter leakage current
VCE = 50V, IB = 0
ON CHARACTERISTICS (1)
ICEO
-
1
DC current gain
IC = 20A, VCE = 5V
IC = 30A, VCE = 5V
hFE
1000
-
200
-
Collector emitter saturation voltage
IC = 20A, IB = 200mA
IC = 30A, IB = 300mA
VCE(sat)
-
3
-
4
Base emitter saturation voltage
IC = 20A, IB = 200mA
IC = 30A, IB = 300mA
VBE(sat)
-
3.5
-
5
Unit
V
V
V
A
A
W
W/°C
°C
°C/W
°C
Unit
V
mA
mA
mA
-
V
V
Rev. 20150723




DIGITRON

MJ11016 Datasheet Preview

MJ11016 Datasheet

NPN Transistor

No Preview Available !

High-reliability discrete products
and engineering services since 1977
Characteristic
DYNAMIC CHARACTERISTICS
Current gain bandwidth product
IC = 10A, VCE = 3V, f = 1MHz
Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%.
MECHANICAL CHARACTERISTICS
Case
TO-3
Marking
Alpha-numeric
Polarity
See below
MJ11012, MJ11014,
MJ11016
NPN SILICON POWER DARLINGTON TRANSISTORS
Symbol
Min
Max
Unit
hfe
4
-
MHz
Rev. 20150723



Part Number MJ11016
Description NPN Transistor
Maker DIGITRON
Total Page 3 Pages
PDF Download

MJ11016 Datasheet PDF





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