Datasheet Summary
ADVANCED INFORMATION YM
PLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
Q1
N-Channel
12V
Q2 P-Channel
-20V
RDS(ON)
25mΩ @ VGS = 4.5V 32mΩ @ VGS = 2.5V 40mΩ @ VGS = 1.8V 80mΩ @ VGS = -4.5V 100mΩ @ VGS = -2.5V 140mΩ @ VGS = -1.8V 210mΩ @ VGS = -1.5V
ID TA = +25°C
6.1A 5.4A 4.9A -3.5A -3.1A -2.6A -2.1A
Description
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to...