Datasheet Summary
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) Max 27mΩ @ VGS = 4.5V 35mΩ @ VGS = 2.5V
ID Max TA = +25°C
5.6A
4.9A
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/
Description and Applications
This MOSFET...