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DMN2025UFDF - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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DMN2025UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 25mΩ @ VGS = 4.5V 31mΩ @ VGS = 2.5V 60mΩ @ VGS = 1.8V ID max TA = +25°C 6.5A 5.9A 4.5A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.
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