Datasheet Summary
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Device
NChannel
BVDSS 20V
RDS(ON) Max
35mΩ @ VGS = 4.5V 43mΩ @ VGS = 2.5V
ID MAX TA = +25°C
4.6A 4.2A
- PCB Footprint of 4mm2
- Low On-Resistance
- Low Input Capacitance
- Low Profile, 0.6mm Maximum Height
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- An automotive-pliant part is available under separate datasheet (DMN2053UFDBQ)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management...