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DMN2053UQ - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General purpose interfacing switches Power management functions SOT23 DMN20

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN2053UQ is suitable for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AADDVVAANNCCEEDDI INFNFOORRMMAATITIOONN Product Summary BVDSS 20V RDS(ON) max 29m @ VGS = 10V 35m @ VGS = 4.5V ID max TA = +25°C 6.5A 5.4A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General purpose interfacing switches  Power management functions SOT23 DMN2053UQ N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.